A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

Abstract: In this paper, a concept for the in-situ detection of humidity-driven degradation of IGBT modules (i.e., increased leakage current and reduced breakdown voltage) is tested for its robustness ...

Abstract: Accurate junction temperature prediction in multichip insulated gate bipolar transistor (IGBT) modules is paramount for ensuring the reliability and efficiency of power electronic systems.

I have never been very good at introducing topics. During my presentations, I either jump directly into the subject matter, or start with a joke. My mom always said I could be a stand-up comedian. I ...

Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

Mitsubishi announced the development of a new version of its 2.0-kV IGBT module in an LV100 package intended specifically for photovoltaic applications. The power module, which fills the gap between 1 ...

LINCOLN, England, Oct. 31, 2018 /CNW/ - Dynex Power Inc. (TSXV: DNX), a leading manufacturer of high power semiconductors and electronic equipment, is pleased to announce the launch of ...